Co-integration of elemental semiconductor devices and compound semiconductor devices

ABSTRACT

First and second template epitaxial semiconductor material portions including different semiconductor materials are formed within a dielectric template material layer on a single crystalline substrate. Heteroepitaxy is performed to form first and second epitaxial semiconductor portions on the first and second template epitaxial semiconductor material portions, respectively. At least one dielectric bonding material layer is deposited, and a handle substrate is bonded to the at least one dielectric bonding material layer. The single crystalline substrate, the dielectric template material layer, and the first and second template epitaxial semiconductor material portions are subsequently removed. Elemental semiconductor devices and compound semiconductor devices can be formed on the first and second semiconductor portions, which are embedded within the at least one dielectric bonding material layer on the handle substrate.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. patent application Ser. No.13/677,647, filed Nov. 15, 2012 the entire content and disclosure ofwhich is incorporated herein by reference.

BACKGROUND

The present disclosure relates to a semiconductor structure, andparticularly to semiconductor structures including elementalsemiconductor devices and compound semiconductor devices and a method ofmanufacturing the same.

Compound semiconductor devices can provide enhanced device performancecompared to elemental semiconductor devices in some aspects, whileelemental semiconductor devices can provide an advantage over compoundsemiconductor devices in other aspects. For example, many III-V compoundsemiconductor materials can provide higher electron mobility compared tosilicon, germanium, or silicon germanium alloys, and are suitable forn-type metal-oxide-semiconductor devices. At the same time, silicon,germanium, or silicon germanium alloys can provide high hole mobility,and may be suitable for p-type metal-oxide-semiconductor devices. Thus,it would be desirable to integrate compound semiconductor devices andelemental semiconductor devices on a same substrate without losingadvantages inherent to respective semiconductor devices in order toprovide a set of high performance devices such as complementarymetal-oxide-semiconductor (CMOS) semiconductor devices.

BRIEF SUMMARY

A first trench and a second trench are formed through a dielectrictemplate material layer on a single crystalline substrate. A firsttemplate epitaxial semiconductor material portion is formed within thefirst trench by epitaxy of a first template semiconductor material, anda second template epitaxial semiconductor material portion is formedwithin the second trench by epitaxy of a second template semiconductormaterial. One of the first and second template semiconductor materialscan be an elemental semiconductor material, and the other of the firstand second template semiconductor materials can be a compoundsemiconductor material. A first epitaxial semiconductor portionincluding a first semiconductor material that is different from thefirst template semiconductor material is epitaxially grown on the firsttemplate epitaxial semiconductor material portion, and a secondepitaxial semiconductor portion including a second semiconductormaterial that is different from the second template semiconductormaterial is epitaxially grown on the second template epitaxialsemiconductor material portion. At least one dielectric bonding materiallayer is deposited, and a handle substrate is bonded to the at least onedielectric bonding material layer. The single crystalline substrate, thedielectric template material layer, and the first and second templateepitaxial semiconductor material portions are subsequently removed.Elemental semiconductor devices and compound semiconductor devices canbe formed on the first and second semiconductor portions, at least oneof which is embedded within the at least one dielectric bonding materiallayer on the handle substrate.

According to an aspect of the present disclosure, a method of forming asemiconductor structure is provided. A first trench and a second trenchare formed through a dielectric template material layer on a singlecrystalline substrate. A first template epitaxial semiconductor materialportion is formed within the first trench by epitaxy of a first templatesemiconductor material and a second template epitaxial semiconductormaterial portion is formed within the second trench by epitaxy of asecond template semiconductor material. One of the first and secondtemplate semiconductor materials is an elemental semiconductor material,and another of the first and second template semiconductor materials isa compound semiconductor material. A first epitaxial semiconductorportion including a first semiconductor material that is different fromthe first template semiconductor material is epitaxially grown on thefirst template epitaxial semiconductor material portion. A secondepitaxial semiconductor portion including a second semiconductormaterial that is different from the second template semiconductormaterial is epitaxially grown on the second template epitaxialsemiconductor material portion. At least one dielectric bonding materiallayer is formed over the first and second epitaxial semiconductorportions. A handle substrate is bonded to the at least one dielectricbonding material layer. The single crystalline substrate, the dielectrictemplate material layer, and the first and second template epitaxialsemiconductor material portions are removed.

According to another aspect of the present disclosure, a semiconductorstructure includes at least one dielectric bonding material layerlocated on a handle substrate. The semiconductor structure furtherincludes a first epitaxial semiconductor portion and a second epitaxialsemiconductor portion. At least a lower portion of one of the first andsecond epitaxial semiconductor portions is embedded within the at leastone bonding material layer. One of the first and second epitaxialsemiconductor portions include a single crystalline elementalsemiconductor material, and another of the first and second epitaxialsemiconductor portions include a single crystalline compoundsemiconductor material.

BRIEF DESCRIPTION OF SEVERAL VIEWS OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view of a first exemplarysemiconductor structure after formation of a dielectric templatematerial layer and a dielectric hard mask layer according to a firstembodiment of the present disclosure.

FIG. 2 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a first trench and a secondtrench according to the first embodiment of the present disclosure.

FIG. 3 is a vertical cross-sectional view of a first variation of thefirst exemplary semiconductor structure after formation of at least onelattice-mismatched epitaxial semiconductor material layer, a dielectrictemplate material layer, and a dielectric hard mask layer according tothe first embodiment of the present disclosure.

FIG. 4 is a vertical cross-sectional view of the first variation of thefirst exemplary semiconductor structure after formation of a firsttrench and a second trench according to the first embodiment of thepresent disclosure.

FIG. 5 is a vertical cross-sectional view of a second variation of thefirst exemplary semiconductor structure after formation of a firsttrench and a second trench according to the first embodiment of thepresent disclosure.

FIG. 6 is a vertical cross-sectional view of a third variation of thefirst exemplary semiconductor structure after formation of a firsttrench and a second trench according to the first embodiment of thepresent disclosure.

FIG. 7 is a vertical cross-sectional view of the third variation of thefirst exemplary semiconductor structure after converting surfaceportions of a single crystalline substrate into dielectric materialportions according to the first embodiment of the present disclosure.

FIG. 8 is a vertical cross-sectional view of the third variation of thefirst exemplary semiconductor structure after removal of bottomsubportions of the dielectric material portions according to the firstembodiment of the present disclosure.

FIG. 9 is a vertical cross-sectional view of the first exemplarysemiconductor structure after forming first template epitaxialsemiconductor material portions according to the first embodiment of thepresent disclosure.

FIG. 10 is a vertical cross-sectional view of the third variation of thefirst exemplary semiconductor structure after planarization of the firsttemplate epitaxial semiconductor material portions employing thedielectric hard mask layer as a stopping layer according to the firstembodiment of the present disclosure.

FIG. 11 is a vertical cross-sectional view of the first exemplarysemiconductor structure after deposition and patterning of a disposablemasking layer according to the first embodiment of the presentdisclosure.

FIG. 12 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of one of the two first templateepitaxial semiconductor material portions according to the firstembodiment of the present disclosure.

FIG. 13 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a second template epitaxialsemiconductor material portion according to the first embodiment of thepresent disclosure.

FIG. 14 is a vertical cross-sectional view of the first exemplarysemiconductor structure after planarization of the second templateepitaxial semiconductor material portion according to the firstembodiment of the present disclosure.

FIG. 15 is a vertical cross-sectional view of the first exemplarysemiconductor structure after deposition and patterning of a firstdielectric bonding material layer and formation of a first epitaxialsemiconductor portion according to the first embodiment of the presentdisclosure.

FIG. 16 is a vertical cross-sectional view of the first exemplarysemiconductor structure after deposition and patterning of a seconddielectric bonding material layer and formation of a second epitaxialsemiconductor portion according to the first embodiment of the presentdisclosure.

FIG. 17 is a vertical cross-sectional view of the first exemplarysemiconductor structure after deposition and planarization of a thirddielectric bonding material layer according to the first embodiment ofthe present disclosure.

FIG. 18 is a vertical cross-sectional view of the first variation of thefirst exemplary semiconductor structure after deposition andplanarization of a third dielectric bonding material layer according tothe first embodiment of the present disclosure.

FIG. 19 is a vertical cross-sectional view of the second variation ofthe first exemplary semiconductor structure after deposition andplanarization of a third dielectric bonding material layer according tothe first embodiment of the present disclosure.

FIG. 20 is a vertical cross-sectional view of the third variation of thefirst exemplary semiconductor structure after deposition andplanarization of a third dielectric bonding material layer according tothe first embodiment of the present disclosure.

FIG. 21 is a vertical cross-sectional view of the first exemplarysemiconductor structure after bonding a handle substrate to the at leastone dielectric bonding material layer according to the first embodimentof the present disclosure.

FIG. 22 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the single crystallinesubstrate according to the first embodiment of the present disclosure.

FIG. 23 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the dielectric templatematerial layer according to the first embodiment of the presentdisclosure.

FIG. 24 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the first template epitaxialsemiconductor material portion according to the first embodiment of thepresent disclosure.

FIG. 25 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the second template epitaxialsemiconductor material portion according to the first embodiment of thepresent disclosure.

FIG. 26 is a vertical cross-sectional view of the first exemplarysemiconductor structure after removal of the dielectric hard mask layerand flipping the first exemplary semiconductor structure upside downaccording to the first embodiment of the present disclosure.

FIG. 27 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a capping semiconductormaterial layer, a gate dielectric layer, and a gate electrode layeraccording to the first embodiment of the present disclosure.

FIG. 28 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of gate electrodes, gatedielectrics, gate spacers, and capping semiconductor material portionsaccording to the first embodiment of the present disclosure.

FIG. 29 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a first field effecttransistor according to the first embodiment of the present disclosure.

FIG. 30 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a second field effecttransistor according to the first embodiment of the present disclosure.

FIG. 31 is a vertical cross-sectional view of the first exemplarysemiconductor structure after formation of a contact level dielectriclayer and contact via structures therethrough according to the firstembodiment of the present disclosure.

FIG. 32 is a vertical cross-sectional view of a second exemplarysemiconductor structure after formation of a template dielectricmaterial layer on a single crystalline substrate according to a secondembodiment of the present disclosure.

FIG. 33 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a first trench and a secondtrench according to the second embodiment of the present disclosure.

FIG. 34 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of disposable material portionsaccording to the second embodiment of the present disclosure.

FIG. 35 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a first disposable maskinglayer and a first patterned photoresist layer according to the secondembodiment of the present disclosure.

FIG. 36 is a vertical cross-sectional view of the second exemplarysemiconductor structure after etching physically exposed portions of thefirst disposable masking layer and removal of one of the disposablematerial portions according to the second embodiment of the presentdisclosure.

FIG. 37 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a first template epitaxialsemiconductor material portion according to the second embodiment of thepresent disclosure.

FIG. 38 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a second disposable maskinglayer and a second patterned photoresist layer according to the secondembodiment of the present disclosure.

FIG. 39 is a vertical cross-sectional view of the second exemplarysemiconductor structure after etching physically exposed portions of thefirst and second disposable masking layers and removal of another of thedisposable material portions according to the second embodiment of thepresent disclosure.

FIG. 40 is a vertical cross-sectional view of the second exemplarysemiconductor structure after formation of a second template epitaxialsemiconductor material portion according to the second embodiment of thepresent disclosure.

FIG. 41 is a vertical cross-sectional view of the second exemplarysemiconductor structure after planarization of the first and secondtemplate epitaxial semiconductor material portions according to thesecond embodiment of the present disclosure.

FIG. 42 is a vertical cross-sectional view of a third exemplarysemiconductor structure after planarization of the second templateepitaxial semiconductor material portions according to a thirdembodiment of the present disclosure.

FIG. 43 is a vertical cross-sectional view of a third exemplarysemiconductor structure after formation of a dielectric hard mask layerand a patterned photoresist layer according to the third embodiment ofthe present disclosure.

FIG. 44 is a vertical cross-sectional view of a third exemplarysemiconductor structure after removal of physically exposed portions ofthe dielectric hard mask layer and the second disposable masking layerand formation of a first epitaxial semiconductor portion according tothe third embodiment of the present disclosure.

FIG. 45 is a vertical cross-sectional view of a third exemplarysemiconductor structure after formation of a first dielectric bondingmaterial layer and a patterned photoresist layer according to the thirdembodiment of the present disclosure.

FIG. 46 is a vertical cross-sectional view of a third exemplarysemiconductor structure after removal of physically exposed portions ofthe first dielectric bonding material layer and the dielectric hard masklayer according to the third embodiment of the present disclosure.

FIG. 47 is a vertical cross-sectional view of a third exemplarysemiconductor structure after formation of a first epitaxialsemiconductor portion according to the third embodiment of the presentdisclosure.

FIG. 48 is a vertical cross-sectional view of the third exemplarysemiconductor structure after deposition and planarization of a seconddielectric bonding material layer and bonding a handle substrate to thesecond dielectric bonding material layer according to the thirdembodiment of the present disclosure.

FIG. 49 is a vertical cross-sectional view of the third exemplarysemiconductor structure after removal of the single crystallinesubstrate according to the third embodiment of the present disclosure.

FIG. 50 is a vertical cross-sectional view of the third exemplarysemiconductor structure after removal of the dielectric templatematerial layer according to the third embodiment of the presentdisclosure.

FIG. 51 is a vertical cross-sectional view of the third exemplarysemiconductor structure after removal of the first template epitaxialsemiconductor material portion, removal of the second template epitaxialsemiconductor material portion, removal of the dielectric hard masklayer, and flipping the third exemplary semiconductor structure upsidedown according to the third embodiment of the present disclosure.

FIG. 52 is a vertical cross-sectional view of the third exemplarysemiconductor structure after formation of a first field effecttransistor, a second field effect transistor, and a contact leveldielectric layer and contact via structures therethrough according tothe third embodiment of the present disclosure.

FIG. 53 is a vertical cross-sectional view of a fourth exemplarysemiconductor structure after formation of a dielectric hard mask layerin the first and second trenches according to the fourth embodiment ofthe present disclosure.

FIG. 54 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after removal of portions of the dielectric hardmask layer from within the first trench according to the fourthembodiment of the present disclosure.

FIG. 55 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after formation of a first template epitaxialsemiconductor material portion within the first trench according to thefourth embodiment of the present disclosure.

FIG. 56 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after formation and patterning of a disposablemasking layer to form an opening over the second trench according to thefourth embodiment of the present disclosure.

FIG. 57 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after removal of portions of the dielectric hardmask layer from within the second trench according to the fourthembodiment of the present disclosure.

FIG. 58 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after formation of a second template epitaxialsemiconductor material portion within the first trench according to thefourth embodiment of the present disclosure.

FIG. 59 is a vertical cross-sectional view of the fourth exemplarysemiconductor structure after planarization of the second templateepitaxial semiconductor material portion according to the fourthembodiment of the present disclosure.

FIG. 60 is a vertical cross-sectional view of a fifth exemplarysemiconductor structure after recessing first and second templateepitaxial semiconductor material portions according to a fifthembodiment of the present disclosure.

FIG. 61 is a vertical cross-sectional view of the fifth exemplarysemiconductor structure after formation of first and second epitaxialsemiconductor portions according to the fifth embodiment of the presentdisclosure.

FIG. 62 is a vertical cross-sectional view of the fifth exemplarysemiconductor structure after formation of a first field effecttransistor, a second field effect transistor, and a contact leveldielectric layer and contact via structures therethrough according tothe fifth embodiment of the present disclosure.

DETAILED DESCRIPTION

As stated above, the present disclosure relates to semiconductorstructures including elemental semiconductor devices and compoundsemiconductor devices and a method of manufacturing the same. Aspects ofthe present disclosure are now described in detail with accompanyingfigures. It is noted that like reference numerals refer to like elementsacross different embodiments. The drawings are not necessarily drawn toscale.

Referring to FIG. 1, a first exemplary semiconductor structure accordingto a first embodiment of the present disclosure includes a singlecrystalline substrate 10, a dielectric template material layer 20 formedthereupon, and a dielectric hard mask layer 22 formed on the top surfaceof the dielectric template material layer 20. The single crystallinesubstrate 10 includes a single crystalline material, which can be asingle crystalline elemental semiconductor material or a singlecrystalline compound semiconductor material. As used herein, anelemental semiconductor material refers to a semiconductor material inwhich a predominant portion (i.e., more than 50% in atomic percentage)is at least one Group IV semiconductor material. As used herein, acompound semiconductor material refers to a semiconductor material inwhich a predominant portion includes at least one compound semiconductormaterial. The single crystalline substrate 10 can include, for example,single crystalline silicon, single crystalline germanium, a singlecrystalline silicon-germanium alloy, a single crystalline silicon-carbonalloy, and/or a single crystalline silicon-germanium-carbon alloy.Alternately or additionally, the single crystalline substrate 10 caninclude a III-V compound semiconductor material and/or a II-V compoundsemiconductor material. In one embodiment, the entirety of the topsurface of the single crystalline substrate 10 can be a surface of asame single crystalline semiconductor material.

The dielectric template material layer 20 includes a dielectric materialsuch as doped silicon oxide, undoped silicon oxide, a dielectric thermaloxide of the semiconductor material of the single crystalline substrate10, an organosilicate glass, or a combination thereof. The dielectrictemplate material layer 20 can be deposited, for example, by chemicalvapor deposition (CVD), spin coating, or a conversion of a top portionof the single crystalline substrate by thermal oxidation (e.g., thermaloxidation of silicon or a silicon germanium alloy). The thickness of thedielectric template material layer 20 can be from 50 nm to 2,000 nm,although lesser and greater thicknesses can also be employed.

The dielectric hard mask layer 22 includes a dielectric material havinga different composition than the dielectric template material layer 20.In one embodiment, the dielectric hard mask layer 22 can include amaterial having a greater resistance to an abrasion (e.g., a chemicalmechanical planarization (CMP) process) than the material of thedielectric template material layer 20 and/or a greater resistance to anetch chemistry that can remove the dielectric material of the dielectrictemplate material layer 20 than the material of the dielectric templatematerial layer 20. For example, the dielectric hard mask layer 22 caninclude silicon nitride, a dielectric metal oxide such as HfO₂ or ZiO₂,a dielectric metal nitride, or a combination thereof. The dielectrichard mask layer 22 can be deposited by chemical vapor deposition (CVD)or atomic layer deposition (ALD). In one embodiment, the thickness ofthe dielectric hard mask layer 22 can be from 3 nm to 30 nm, althoughlesser and greater thicknesses can also be employed.

Referring to FIG. 2, a first trench 29A and a second trench 29B areformed through the dielectric template material layer 20, for example,by applying and patterning a photoresist layer (not shown) to form twoopenings therein, and by etching physically exposed areas within the twoopenings of the patterned photoresist layer with an anisotropic etch. Asurface of the single crystalline substrate 10 is physically exposed atthe bottom of each of the first and second trenches (29A, 29B). In oneembodiment, the thickness of the dielectric template material layer 20and the lateral dimensions of the first and second trenches (29A, 29B)can be selected such that the aspect ratio of each trench (29A, 29B) canbe greater than 1.0. As used herein, an aspect ratio refers to the ratioof the height of a trench to the minimum lateral dimension betweensidewalls of the trench. A trench having an aspect ratio greater than1.0 is herein referred to as a “high aspect ratio trench.”

Referring to FIG. 3, a first variation of the first exemplarysemiconductor structure of the present disclosure can be derived fromthe first exemplary semiconductor structure by employing at least onelattice-mismatched epitaxial semiconductor material layer, which caninclude, for example, a first lattice-mismatched epitaxial semiconductormaterial layer 10′ and a second lattice-mismatched epitaxialsemiconductor material layer 10″. As used herein, a “lattice mismatch”refers to a condition in which a first lattice constant of a firstsingle crystalline material is different from a second lattice constantof a second single crystalline material.

Each of the at least one lattice-mismatched epitaxial semiconductormaterial layer (10′, 10″) is in epitaxial alignment with the singlecrystalline structure of the single crystalline substrate 10. The degreeof lattice mismatch between each of the at least one lattice-mismatchedepitaxial semiconductor material layer (10′, 10″) and an underlyingsemiconductor material layer on which the lattice-mismatched epitaxialsemiconductor material layer (10′ or 10″) is deposited is such thatepitaxial deposition is possible despite the lattice mismatch, and theatomic registry is preserved through generation of misfit dislocationsand lattice relaxation of the deposited single crystalline material ofthe lattice-mismatched epitaxial semiconductor material layer (10′ or10″) with thickness. The thickness of each lattice-mismatched epitaxialsemiconductor material layer (10′, 10″) can be from 100 nm to 10microns.

Referring to FIG. 4, the first and second trenches (29A, 29B) can beformed employing the methods of the processing step of FIG. 2. Portionsof the dielectric template material layer 20 and optionally portions ofthe at least one lattice-mismatched epitaxial semiconductor materiallayer (10′, 10″) are etched to form the first and second trenches (29A,29B).

Referring to FIG. 5, a second variation of the first exemplarysemiconductor structure of the present disclosure can be derived fromthe first exemplary semiconductor structure or the first variation ofthe first exemplary semiconductor structure by employing a facet-formingetch process at least during a latter portion of the etch process thatforms the first and second trenches (29A, 29B). The facet-forming etchchemistry can be a wet etch chemistry or a dry etch chemistry as knownin the art. The first and second trenches (29A, 29B) extend into thesingle crystalline substrate 10. Bottom surfaces of the first and secondtrenches (29A, 29B) include faceted crystallographic surfaces of thesingle crystalline substrate 10.

Referring to FIG. 6, a third variation of the first exemplarysemiconductor structure of the present disclosure can be derived fromthe first exemplary semiconductor structure of FIG. 2, the firstvariation of the first exemplary semiconductor structure of FIG. 4, orthe second variation of the first exemplary semiconductor structure ofFIG. 5 by anisotropically etching, and optionally crystallographicallyetching, the single crystalline substrate 10. The first and secondtrenches (29A, 29B) extend into the single crystalline substrate 10.Bottom surfaces of the first and second trenches (29A, 29B) includefaceted crystallographic surfaces of the single crystalline substrate10. Further, sidewall surfaces of the first and second trenches (29A,29B) include vertical surfaces of the single crystalline substrate 10.The vertical distance between the bottommost point of each trench (29A,29B) and the interface between the single crystalline substrate 10 andthe dielectric template material layer 20 can be from 50 nm to 50microns, although lesser and greater vertical distances can also beemployed. The increased depth of the first and second trenches (29A,29B) increases the aspect ratio of the first and second trenches (29A,29B), which can decrease crystallographic defects of single crystallinesemiconductor materials to be subsequently deposited in the first andsecond trenches (29A, 29B).

Referring to FIG. 7, surface portions of a single crystalline substrate10 of the third variation of the first exemplary semiconductor structurecan be converted into dielectric material portions, for example, bythermal oxidation, plasma oxidation, thermal nitridation, plasmanitridation, or a combination thereof. A dielectric material portion 512is formed below the interface between the single crystalline substrate10 and the dielectric template material layer 20. For example, if thesingle crystalline substrate 10 includes silicon, the dielectricmaterial portion 512 includes silicon oxide.

Referring to FIG. 8, bottom subportions of the dielectric materialportions 512 are removed, for example, by an anisotropic etch tophysically expose surfaces of the single crystalline substrate 10. Inone embodiment, the physically exposed surfaces of the singlecrystalline substrate 10 can be faceted crystallographic surfaces.

Referring to FIG. 9, selective epitaxy of a semiconductor material,which is herein referred to as a first template epitaxial semiconductormaterial, is performed to simultaneously form a first template epitaxialsemiconductor material portion 30 in the first trench 29A and anotherfirst template epitaxial semiconductor material portion 30′ in thesecond trench 29B.

In one embodiment, the first template epitaxial semiconductor materialcan be an elemental semiconductor material. For example, the firsttemplate epitaxial semiconductor material can be single crystallinesilicon, single crystalline germanium, a single crystallinesilicon-germanium alloy, a single crystalline silicon-carbon alloy, anda single crystalline silicon-germanium-carbon alloy. In anotherembodiment, the first template epitaxial semiconductor material can be acompound semiconductor material such as a indium phosphide, other III-Vcompound semiconductor material and a II-V compound semiconductormaterial. The first template epitaxial semiconductor material can be thesame as, or can be different from, the single crystalline semiconductormaterial of the single crystalline semiconductor substrate 10.

The single crystalline semiconductor material of the single crystallinesemiconductor substrate 10 has a substrate lattice constant, and thefirst template epitaxial semiconductor material has a first latticeconstant. The first lattice constant can be the same as, or can bedifferent from, the substrate lattice constant. In one embodiment, thefirst template epitaxial semiconductor material portions (30, 30′) areepitaxially aligned to the single crystalline structure of the singlecrystalline substrate 10 with a lattice mismatch. In one embodiment, thefirst lattice constant can differ from the substrate lattice constant bya mismatch percentage of the substrate lattice constant such that themismatch percentage is in a range from 1.0% to 15%.

Referring to FIG. 10, the first template epitaxial semiconductormaterial portions (30, 30′) can be planarized, for example, by chemicalmechanical planarization (CMP) employing the dielectric hard mask layer22 as a stopping layer. Portions of the first template semiconductormaterial are removed from above the horizontal plane of the top surfaceof the dielectric hard mask layer 22. Top surfaces of the first templateepitaxial semiconductor material portions (30, 30′) are coplanar withthe top surface of the dielectric hard mask layer 22.

Referring to FIG. 11, a disposable masking layer 24 is deposited andpatterned (for example, by a combination of lithographic methods and anetch) to form an opening over one of the two first template epitaxialsemiconductor material portions (30, 30′), i.e., the other firsttemplate epitaxial semiconductor material portion 30′.

Referring to FIG. 12, the other first template epitaxial semiconductormaterial portion 30′ is removed from the second trench 29B selective tothe dielectric material of the dielectric template material layer 20 byan etch, which can be a wet etch or a dry etch. The second cavity 29Bbecomes empty, and at least one single crystalline surface (which mayinclude crystallographic facets) of the single crystalline substrate 10is physically exposed at the bottom of the second trench 29B.

Referring to FIG. 13, selective epitaxy of another semiconductormaterial, which is herein referred to as a second template epitaxialsemiconductor material, is performed to form a second template epitaxialsemiconductor material portion 40 in the second trench 29B. One of thefirst and second template semiconductor materials is an elementalsemiconductor material, and another of the first and second templatesemiconductor materials is a compound semiconductor material.

In one embodiment, the first template epitaxial semiconductor materialcan be an elemental semiconductor material, and the second templateepitaxial semiconductor material can be a compound semiconductormaterial. In another embodiment, the first template epitaxialsemiconductor material can be a compound semiconductor material, and thesecond template epitaxial semiconductor material can be an elementalsemiconductor material. The second template epitaxial semiconductormaterial can be the same as, or can be different from, the singlecrystalline semiconductor material of the single crystallinesemiconductor substrate 10. At least one of the first and secondtemplate epitaxial semiconductor materials is different from the singlecrystalline semiconductor material of the single crystallinesemiconductor substrate 10.

The single crystalline semiconductor material of the single crystallinesemiconductor substrate 10 has the substrate lattice constant, and thesecond template epitaxial semiconductor material has a second latticeconstant. The second lattice constant can be the same as, or can bedifferent from, the substrate lattice constant. In one embodiment, thesecond template epitaxial semiconductor material portion 40 epitaxiallyaligned to the single crystalline structure of the single crystallinesubstrate 10 with a lattice mismatch. In one embodiment, the secondlattice constant can differ from the substrate lattice constant by amismatch percentage of the substrate lattice constant such that themismatch percentage is in a range from 1.0% to 15%.

In one embodiment, at least one of the first lattice constant and thesecond lattice constant is different from the substrate latticeconstant. In one embodiment, at least one of the first lattice constantand the second lattice constant differs from the substrate latticeconstant by a mismatch percentage of the substrate lattice constant suchthat the mismatch percentage is in a range from 1.0% to 15%. In oneembodiment, each of the first template epitaxial semiconductor materialportion 20 and the second template epitaxial semiconductor materialportion 40 can be epitaxially aligned to the single crystallinestructure of the single crystalline substrate 10 with a latticemismatch.

Referring to FIG. 14, the second template epitaxial semiconductormaterial portion 40 can be planarized, for example, by chemicalmechanical planarization (CMP) employing the dielectric hard mask layer22 as a stopping layer. Portions of the first template semiconductormaterial and the disposable masking layer 24 are removed from above thehorizontal plane of the top surface of the dielectric hard mask layer22. Top surfaces of the first template epitaxial semiconductor materialportion 30 and the second template epitaxial semiconductor materialportion 40 are coplanar with the top surface of the dielectric hard masklayer 22.

Referring to FIG. 15, a first dielectric bonding material layer 52 isdeposited and patterned to provide an opening over the first templateepitaxial semiconductor material portion 30. The first dielectricbonding material layer 52 includes a dielectric material that canprovide sufficient adhesion to the material of the dielectric hard masklayer 22 to prevent delamination of the dielectric hard mask layer 22.In one embodiment, the first dielectric bonding material layer 52 caninclude an undoped silicon oxide material (such as undoped silicateglass (USG)), a doped semiconductor oxide material (such asborophosphosilicate glass, borosilicate glass, phosphosilicate glass,fluorosilicate glass, etc.), a spin-on glass (SOG) material, or acombination thereof. The thickness of the first dielectric bondingmaterial layer 52 can be from 3 nm to 300 nm, although lesser andgreater thicknesses can also be employed.

The patterning of the first dielectric bonding material layer 52 isperformed such that the second template epitaxial semiconductor materialportion 40 is covered with the patterned first dielectric bondingmaterial layer 52, and a top surface of the first template epitaxialsemiconductor material portion 30 is physically exposed. A firstepitaxial semiconductor portion 60 is grown directly on the firsttemplate epitaxial semiconductor material portion 30 employing aselective epitaxy process. The selective epitaxy deposits a firstsemiconductor material on the top surface of the first templateepitaxial semiconductor material portion 30. The first semiconductormaterial is different from the first template semiconductor material ofthe first template epitaxial semiconductor material portion 30.

In one embodiment, the first template semiconductor material of thefirst template epitaxial semiconductor material portion 30 is a firstelemental semiconductor material and the first semiconductor material ofthe first epitaxial semiconductor portion 60 is a second elementalsemiconductor material that is different from the first elementalsemiconductor material. The first and second elemental semiconductormaterials are selected such that an etch chemistry exists for removingthe first elemental semiconductor material selective to the secondelemental semiconductor material. For example, the first elementalsemiconductor material can be silicon and the second elementalsemiconductor material can be a silicon germanium alloy. In anotherexample, the first elemental semiconductor material can be a silicongermanium alloy and the second elemental semiconductor material can besilicon. In yet another example, the first elemental semiconductormaterial can be germanium and the second elemental semiconductormaterial can be a silicon germanium alloy. In still another example, thefirst elemental semiconductor material can be a silicon germanium alloyand the second elemental semiconductor material can be germanium. Ineven another example, the first and second elemental semiconductormaterials can be silicon germanium alloys having different atomicconcentrations of germanium such that the first elemental semiconductormaterial can be removed without substantially etching the secondelemental semiconductor material.

In another embodiment, the first template semiconductor material of thefirst template epitaxial semiconductor material portion 30 is a firstcompound semiconductor material and the first semiconductor material ofthe first epitaxial semiconductor portion 60 is a second compoundsemiconductor material that is different from the first compoundsemiconductor material. The first and second compound semiconductormaterials are selected such that a known etch chemistry exists forremoving the first compound semiconductor material selective to thesecond compound semiconductor material.

The first epitaxial semiconductor portion 60 can be formed withepitaxial alignment with the single crystalline structure of the firsttemplate epitaxial semiconductor material portion 30. Surfaces of thefirst epitaxial semiconductor portion 60 can include crystallographicfacets, one of which can be a horizontal top surface. The thickness ofthe first epitaxial semiconductor portion 60 is defined as the maximumdimension between the planar bottom surface of the first epitaxialsemiconductor portion 60 and the topmost surface of the first epitaxialsemiconductor portion 60, and is herein referred to as a first thicknesst1. The first thickness t1 can be in a range from 3 nm to 1,000 nm,although lesser and greater thicknesses can also be employed.

Referring to FIG. 16, a second dielectric bonding material layer 54 isdeposited and patterned to provide an opening over the second templateepitaxial semiconductor material portion 40. A portion of the firstdielectric bonding material layer 52 overlying the second templateepitaxial semiconductor material portion 40 is subsequently removed, forexample, employing the same etch mask that is employed to pattern thesecond dielectric bonding material layer 54. The second dielectricbonding material layer 54 includes a dielectric material that canprovide sufficient adhesion to the first semiconductor material of thefirst epitaxial semiconductor portion 60 to prevent detachment of thefirst semiconductor material. In one embodiment, the second dielectricbonding material layer 54 can include an undoped silicon oxide material(such as undoped silicate glass (USG)), a doped semiconductor oxidematerial (such as borophosphosilicate glass, borosilicate glass,phosphosilicate glass, fluorosilicate glass, etc.), a spin-on glass(SOG) material, or a combination thereof. The thickness of the seconddielectric bonding material layer 54 can be from 3 nm to 300 nm,although lesser and greater thicknesses can also be employed. Thecomposition of the second dielectric bonding material layer 54 may bethe same as, or may be different from, the composition of the firstdielectric bonding material layer 52.

The patterning of the second dielectric bonding material layer 54 isperformed such that the first epitaxial semiconductor portion 60 iscovered with the patterned second dielectric bonding material layer 54,and a top surface of the second template epitaxial semiconductormaterial portion 40 is physically exposed. A second epitaxialsemiconductor portion 70 is deposited directly on the second templateepitaxial semiconductor material portion 60 employing a selectiveepitaxy process. The selective epitaxy deposits a second semiconductormaterial on the top surface of the second template epitaxialsemiconductor material portion 60. The second semiconductor material isdifferent from the second template semiconductor material of the secondtemplate epitaxial semiconductor material portion 60.

In one embodiment, the first template semiconductor material of thefirst template epitaxial semiconductor material portion 30 is a firstelemental semiconductor material, the first semiconductor material ofthe first epitaxial semiconductor portion 60 is a second elementalsemiconductor material that is different from the first elementalsemiconductor material, the second template semiconductor material ofthe second template epitaxial semiconductor material portion 40 is afirst compound semiconductor material, and the second semiconductormaterial of the second epitaxial semiconductor portion 70 is a secondcompound semiconductor material that is different from the firstcompound semiconductor material. The first and second compoundsemiconductor materials are selected such that a known etch chemistryexists for removing the first compound semiconductor material selectiveto the second compound semiconductor material.

In another embodiment, the first template semiconductor material of thefirst template epitaxial semiconductor material portion 30 is a firstcompound semiconductor material, the first semiconductor material of thefirst epitaxial semiconductor portion 60 is a second compoundsemiconductor material that is different from the first compoundsemiconductor material, the second template semiconductor material ofthe second template epitaxial semiconductor material portion 40 is afirst elemental semiconductor material, the second semiconductormaterial of the second epitaxial semiconductor portion 70 is a secondelemental semiconductor material that is different from the firstelemental semiconductor material. The first and second elementalsemiconductor materials are selected such that a known etch chemistryexists for removing the first elemental semiconductor material selectiveto the second elemental semiconductor material.

The second epitaxial semiconductor portion 70 can be formed withepitaxial alignment with the single crystalline structure of the secondtemplate epitaxial semiconductor material portion 40. Surfaces of thesecond epitaxial semiconductor portion 70 can include crystallographicfacets, one of which can be a horizontal top surface. The thickness ofthe second epitaxial semiconductor portion 70 is defined as the maximumdimension between the planar bottom surface of the second epitaxialsemiconductor portion 70 and the topmost surface of the second epitaxialsemiconductor portion 70, and is herein referred to as a secondthickness t2. The second thickness t2 can be in a range from 3 nm to1,000 nm, although lesser and greater thicknesses can also be employed.The second thickness t2 can be the same as, or can be different from,the first thickness t1.

Referring to FIG. 17, a third dielectric bonding material layer 56 isdeposited and planarized over the second dielectric bonding materiallayer 54 and the second epitaxial semiconductor portion 70. The thirddielectric bonding material layer 56 includes a dielectric material thatcan provide sufficient adhesion to the second semiconductor material toprevent detachment of the second semiconductor material. In oneembodiment, the third dielectric bonding material layer 56 can includean undoped silicon oxide material (such as undoped silicate glass(USG)), a doped semiconductor oxide material (such asborophosphosilicate glass, borosilicate glass, phosphosilicate glass,fluorosilicate glass, etc.), a spin-on glass (SOG) material, or acombination thereof. The thickness of the third dielectric bondingmaterial layer 56 can be from 3 nm to 300 nm, although lesser andgreater thicknesses can also be employed. The composition of the thirddielectric bonding material layer 56 may be the same as, or may bedifferent from, the composition of the first dielectric bonding materiallayer 52, and may be the same as, or may be different from, thecomposition of the second dielectric bonding material layer 54. Thethird dielectric bonding material layer 56 may include aself-planarizing material such as SOG, or may be planarized afterdeposition, for example, by chemical mechanical planarization (CMP).

Optionally, each of the first and second dielectric bonding materiallayers (52, 54) may be removed prior to deposition of a next dielectricbonding material layer, i.e., prior to deposition of the second or thirddielectric bonding material layers (54 or 56), respectively. Thus, one,two, or three dielectric bonding material layers may be present over thetop surface of the dielectric hard mask layer 22. The entirety of thedielectric bonding material layers (52, 54, 56) is herein referred to asat least one dielectric bonding material layer 50.

Referring to FIG. 18, the first variation of the first exemplarysemiconductor structure (See FIGS. 3 and 4) is illustrated afterdeposition and planarization of the third dielectric bonding materiallayer 56.

Referring to FIG. 19, the second variation of the first exemplarysemiconductor structure (See FIG. 5) is illustrated after deposition andplanarization of a third dielectric bonding material layer 56.

Referring to FIG. 20, the third variation of the first exemplarysemiconductor structure (See FIGS. 6-8) is illustrated after depositionand planarization of a third dielectric bonding material layer 56.

Referring to FIG. 21, a handle substrate 8 is bonded to the at least onedielectric bonding material layer 50. The handle substrate 8 may be anyof a bulk semiconductor substrate, a semiconductor-on-insulatorsubstrate, a stack of at least two semiconductor material layers havingdifferent compositions and epitaxially aligned to one another, aninsulator substrate, a metallic substrate, and a plastic substrate.

Referring to FIG. 22, the single crystalline substrate 10 can beremoved, for example, by grinding, polishing, etching, cleaving,smart-cut, or a combination thereof.

Referring to FIG. 23, the dielectric template material layer 20 isremoved, for example, by etching the dielectric template material layer20 selective to the dielectric hard mask layer 22. For example, if thedielectric template material layer 20 includes silicon oxide and thedielectric hard mask layer 22 includes silicon nitride, the dielectrictemplate material layer 20 can be removed by a wet etch employinghydrofluoric acid.

Referring to FIG. 24, the first template epitaxial semiconductormaterial portion 30 is removed selective to the first epitaxialsemiconductor portion 60 employing an etch chemistry that etches thefirst template semiconductor material selective to the firstsemiconductor material of the first semiconductor material portion 60,i.e., without etching any substantial amount of the first semiconductormaterial.

Referring to FIG. 25, the second template epitaxial semiconductormaterial portion 40 is removed selective to the second epitaxialsemiconductor portion 70 employing an etch chemistry that etches thesecond template semiconductor material selective to the secondsemiconductor material of the second semiconductor material portion 70,i.e., without etching any substantial amount of the second semiconductormaterial.

Referring to FIG. 26, any remaining portion of the dielectric hard masklayer 22, if not removed during the processing steps of FIG. 24 or 25,can be removed selective to the first and second semiconductor materialsand selective to the at least one dielectric bonding material layer 50.The first exemplary semiconductor structure can be flipped upside down.

In the first exemplary semiconductor structure of FIG. 26, the entiretyof the first epitaxial semiconductor portion 60 and the entirety of thesecond epitaxial semiconductor portions 70 are embedded within the atleast one dielectric bonding material layer 50. The first exemplarysemiconductor structure includes at least one dielectric bondingmaterial layer 50 located on a handle substrate 8, and a first epitaxialsemiconductor portion 60 and a second epitaxial semiconductor portion70. At least a lower portion of the first and second epitaxialsemiconductor portions (60, 70) is embedded within the at least onebonding material layer 50. One of the first and second epitaxialsemiconductor portions (60, 70) includes a single crystalline elementalsemiconductor material, and another of the first and second epitaxialsemiconductor portions (60, 70) includes a single crystalline compoundsemiconductor material.

Each of the first and second epitaxial semiconductor portions (60, 70)can have a bottommost surface that is a crystallographic facet. Surfacesof each of the first and second epitaxial semiconductor portions (60,70) can include a plurality of angled crystallographic facets that arenot horizontal and not vertical. All of the plurality of angledcrystallographic facets can be in physical contact with surfaces of theat least one dielectric bonding material layer 50.

Each of the first and second epitaxial semiconductor portions (60, 70)has a topmost surface that is coplanar with a topmost surface of the atleast one dielectric bonding material layer 50. Each of the first andsecond epitaxial semiconductor portions (60, 70) has a trapezoidal shapein a vertical cross-sectional view.

In one embodiment, the at least one dielectric bonding material layer 50can include at least one silicon oxide layer. In one embodiment, the atleast one dielectric bonding material layer 50 can include a pluralityof dielectric bonding material layers having different compositions. Theat least one dielectric bonding material layer 50 can include a firstdielectric bonding material layer 52 not contacting the first and secondepitaxial semiconductor portions (60, 70), and a second dielectricbonding material layer 54 underlying all of the first dielectric bondingmaterial layer 52 and contacting the first epitaxial semiconductorportion 60. The at least one dielectric bonding material layer 50 canfurther include a third dielectric bonding material layer 56 underlyingall of the first dielectric layer 52 and all of the second dielectriclayer and contacting the second epitaxial semiconductor portion 70.

In one embodiment, the first dielectric bonding material layer 52 has afirst composition, the second dielectric bonding material layer 54 has asecond composition, and the third dielectric bonding material layer 56has a third composition, and at least one of the first, second, andthird compositions is different from another of the first, second, andthird compositions, i.e., not all three compositions are the same.

Referring to FIG. 27, a capping semiconductor material layer 80L, a gatedielectric layer 82L, and a gate electrode layer 84L are sequentiallydeposited. The capping semiconductor material layer 80L is optional, andif employed, can provide protection to at least one of the first andsecond epitaxial semiconductor portions (60, 70). The cappingsemiconductor material layer 80L can include, for example, silicon, andcan have a thickness from 1 nm to 10 nm, although lesser and greaterthicknesses can also be employed. The gate dielectric layer 82L caninclude any gate dielectric material known in the art. The gateelectrode layer 84L can include any conductive material known in theart, and may be selected so as to optimize the performance ofsemiconductor devices (such as field effect transistors) to besubsequently formed.

Referring to FIG. 28, gate electrodes, gate dielectrics, gate spacers,and capping semiconductor material portions can be formed. For example,a first gate stack including a first gate dielectric 82A and a firstgate electrode 84A and a second gate stack including a second gatedielectric 82B and a second gate electrode 84B can be formed over thecapping semiconductor material layer 80L. A first gate spacer 86A can beformed around the first gate stack (82A, 84A), and a second gate spacer86B can be formed around the second gate stack (82B, 84B). The cappingsemiconductor material layer 80L can be subsequently formed so thatfirst and second capping semiconductor material portions (80A, 80B) areformed. The first capping semiconductor material portion 80A canunderlie the first gate stack (82A, 84A) and can overlie the firstepitaxial semiconductor portion 60. The second capping semiconductormaterial portion 80B can underlie the second gate stack (82B, 84B) andcan overlie the second epitaxial semiconductor portion 70.

Referring to FIG. 29, a gate level dielectric layer 90 is deposited andpatterned to expose an area of the first gate stack (82A, 84A) and thefirst epitaxial semiconductor portion 60. The gate level dielectriclayer 90 includes a dielectric material such as silicon oxide,organosilicate glass, silicon nitride, or combinations thereof. A firstbody region 62, a first source region 64, and a first drain region 66 ofa first field effect transistor are formed in the first epitaxialsemiconductor portion 60, for example, by implantation of p-type dopantsor n-type dopants employing the first gate stack (82A, 84A) and thefirst gate spacer 86A as a self-aligning implantation mask. Optionally,a first raised source region 65 and a first raised drain region 67 canbe formed on the first source region 64 and the first drain region 66,respectively.

If the first body region 62, the first source region 64, and the firstdrain region 66 include an elemental semiconductor material, the firstfield effect transistor is an elemental semiconductor device. If thefirst body region 62, the first source region 64, and the first drainregion 66 include a compound semiconductor material, the first fieldeffect transistor is a compound semiconductor device. The first fieldeffect transistor may be a p-type field effect transistor or an n-typefield effect transistor. In general, at least one elementalsemiconductor device (which may be a plurality of elementalsemiconductor devices) or at least one compound semiconductor device(which may be a plurality of compound semiconductor devices) can beformed on the first epitaxial semiconductor portion 60 as provided atthe processing step of FIG. 26.

Referring to FIG. 30, a complementary dielectric material portion 91 maybe deposited to cover the first field effect transistor, and the gatelevel dielectric layer 90 can be patterned to expose an area of thesecond gate stack (82B, 84B) and the second epitaxial semiconductorportion 70. A second body region 72, a second source region 74, and asecond drain region 76 of a second field effect transistor are formed inthe second epitaxial semiconductor portion 70, for example, byimplantation of p-type dopants or n-type dopants employing the secondgate stack (82B, 84B) and the second gate spacer 86B as a self-aligningimplantation mask. Optionally, a second raised source region 75 and asecond raised drain region 77 can be formed on the second source region74 and the second drain region 76, respectively.

If the second body region 72, the second source region 74, and thesecond drain region 76 include an elemental semiconductor material, thesecond field effect transistor is an elemental semiconductor device. Ifthe second body region 72, the second source region 74, and the seconddrain region 76 include a compound semiconductor material, the secondfield effect transistor is a compound semiconductor device. The secondfield effect transistor may be a p-type field effect transistor or ann-type field effect transistor. In general, at least one elementalsemiconductor device (which may be a plurality of elementalsemiconductor devices) or at least one compound semiconductor device(which may be a plurality of compound semiconductor devices) can beformed on the second epitaxial semiconductor portion 70 as provided atthe processing step of FIG. 26.

In one embodiment, one of the first and second field effect transistorsis a p-type field effect transistor, and another of the first and secondfield effect transistors is an n-type field effect transistor. A bodyregion, a source region, and a drain region of the n-type field effecttransistor includes the single crystalline compound semiconductormaterial, and a body region, a source region, and a drain region of thep-type field effect transistor includes the single crystalline elementalsemiconductor material so as to provide optimal charge carrier mobilityto the p-type field effect transistor and the n-type field effecttransistor.

Referring to FIG. 31, a contact level dielectric layer 92 can be formed.The contact level dielectric layer 92 includes a dielectric materialsuch as silicon oxide, silicon nitride, organosilicate glass, or acombination thereof. Contact via structures 96 are formed through thecontact level dielectric layer 92 to provide electrical contact tovarious elements of the field effect transistors.

Referring to FIG. 32, a second exemplary semiconductor structure isderived from the first exemplary structure of FIG. 1 by omittingformation of the dielectric hard mask layer 22.

Referring to FIG. 33, a first trench 29A and a second trench 29B areformed employing the same methods as the first embodiment or variousvariations thereof, while not employing a dielectric hard mask layer 22illustrated in FIGS. 1-8.

Referring to FIG. 34, a first disposable material portion 230A and asecond disposable material portion 230B are formed in the first trench29A and the second trench 29B, respectively. The first and seconddisposable material portions (230A, 230B) can be any disposable materialthat can be removed selective to the dielectric template material layer20 and the single crystalline substrate 10 and disposable masking layersto be subsequently formed. For example, the disposable material of thedisposable material portions (230A, 230B) can be silicon nitride,organosilicate glass, a semiconductor material that can be removedselective to the semiconductor material of the single crystallinesubstrate 10, or a metallic material. The first and second disposablematerial portions (230A, 230B) can be formed, by depositing thedisposable material, for example, by chemical vapor deposition (CVD) orby spin coating, and by removing portions of the disposable materialfrom above the top surface of the dielectric template material layer 20by chemical mechanical planarization (CMP). The first disposablematerial portion 230A and the second disposable material portion 230Bare formed concurrently within the first trench 29A and the secondtrench 29B, respectively.

Referring to FIG. 35, a first disposable masking layer 222 is formedover the dielectric template layer 20. The first disposable maskinglayer 222 includes a material that is different from the disposablematerial of the disposable material portions (230A, 230B). For example,the first disposable masking layer 222 can include silicon oxide, adielectric metal oxide, or a dielectric metal nitride. The thickness ofthe first disposable masking layer 222 can be from 3 nm to 60 nm,although lesser and greater thicknesses can also be employed. A firstpatterned photoresist layer 227 is formed over the first disposablemasking layer 222. The first patterned photoresist layer 227 includes anopening that overlies the first disposable material portion 230A.

Referring to FIG. 36, physically exposed portions of the firstdisposable masking layer 222 are removed, for example, by etching. Thefirst disposable material portion 230A is removed from within the firstcavity 29A employing an etch chemistry that etches the disposablematerial of the first disposable material portion 230A selective to thedielectric template material layer 20 and the first disposable maskinglayer 222.

Referring to FIG. 37, the processing steps of FIGS. 9 and 10 areperformed while the first disposable masking layer 222 provides thefunction of the dielectric masking layer 22 of the first embodiment toprevent nucleation of any semiconductor material thereupon. A firsttemplate epitaxial semiconductor material portion 30 is formed withinthe first trench 29A. Because of the presence of the dielectric maskinglayer 22 over the second disposable material portion, a second templateepitaxial semiconductor material portion is not formed at this step incontrast with the first embodiment.

Referring to FIG. 38, a second disposable masking layer 224 is formedover the first disposable masking layer 222 and the first templateepitaxial semiconductor material portion 30. The second disposablemasking layer 224 includes a material that is different from thedisposable material of the second disposable material portion 230B. Forexample, the second disposable masking layer 224 can include siliconnitride, silicon oxynitride, or silicon oxide. The thickness of thesecond disposable masking layer 224 can be from 3 nm to 60 nm, althoughlesser and greater thicknesses can also be employed. A second patternedphotoresist layer 229 is formed over the second disposable masking layer224. The second patterned photoresist layer 229 includes an opening thatoverlies the second disposable material portion 230B.

Referring to FIG. 39, physically exposed portions of the seconddisposable masking layer 224 are removed, for example, by etching. Thesecond disposable material portion 230B is removed from within thesecond cavity 29B employing an etch chemistry that etches the disposablematerial of the second disposable material portion 230B selective to thedielectric template material layer 20 and the second disposable maskinglayer 224.

Referring to FIG. 40, the processing steps of FIG. 13 are performedwhile the second disposable masking layer 224 provides the function ofthe disposable masking layer 24 of the first embodiment to preventnucleation of any semiconductor material thereupon. A second templateepitaxial semiconductor material portion 40 is formed within the secondtrench 29B at this step.

Referring to FIG. 41, the processing steps of FIG. 14 are performed toremove portions of the second template epitaxial semiconductor materialportion 40 and the second disposable masking layer 224 from above thetop surface of the first disposable masking layer 222, for example, bychemical mechanical planarization. The first disposable masking layer222 can function as a stopping layer during the planarization process.

The processing steps of FIGS. 15-31 can be performed such that the firstdisposable masking layer 222 provides the same function as thedielectric hard mask layer 22 of the first embodiment.

Referring to FIG. 42, a third exemplary semiconductor structure can bederived from the second exemplary semiconductor structure of FIG. 40 byperforming a planarization process employing the second disposablemasking layer 224 as a stopping layer during the planarization process.The second template epitaxial semiconductor material portion 40 isremoved from above the topmost surface of the second disposable maskinglayer 224. The top surface of the second template epitaxialsemiconductor material portion 40 is coplanar with the top surface ofthe second disposable masking layer 224 after the planarization process.

Referring to FIG. 43, a dielectric masking layer 242 is formed over thesecond disposable masking layer 224 and the second template epitaxialsemiconductor material portion 40. The dielectric masking layer 242includes a material that is different from the second disposable maskinglayer. For example, the first disposable masking layer 222 can includesilicon oxide, a dielectric metal oxide, or a dielectric metal nitride.The thickness of the dielectric masking layer 242 can be from 3 nm to 60nm, although lesser and greater thicknesses can also be employed. Apatterned photoresist layer 237 is formed over the dielectric maskinglayer 242. The patterned photoresist layer 237 includes an opening thatoverlies the first template epitaxial semiconductor material portion 30.

Referring to FIG. 44, portions of the dielectric masking layer 242 andthe second disposable masking layer 224 within the area of the openingin the patterned photoresist layer 237 is removed, for example, by anetch. The patterned photoresist layer 237 is subsequently removed, forexample, by ashing.

A first epitaxial semiconductor portion 60 is deposited directly on thefirst template epitaxial semiconductor material portion 30 employing aselective epitaxy process. A first semiconductor material is epitaxiallydeposited on the top surface of the first template epitaxialsemiconductor material portion 30. The first semiconductor material isdifferent from the first template semiconductor material of the firsttemplate epitaxial semiconductor material portion 30. In one embodiment,the selective epitaxy process can be the same as in the processing stepof FIG. 15 of the first embodiment. The selection of the first templatesemiconductor material and the first semiconductor material, theepitaxial alignment therebetween, and the lattice matching or latticemismatch therebetween can be the same as in the first embodiment.

In one embodiment, the first epitaxial material can be deposited abovethe top surface of the dielectric masking layer 242, and subsequentlyplanarized such that the top surface of the first epitaxialsemiconductor portion 60 is coplanar with the top surface of thedielectric masking layer 242. In this case, the thickness of the firstepitaxial semiconductor portion 60, which is herein referred to as thefirst thickness t1, can be the same as the sum of the thickness of thedielectric masking layer 242 and the thickness of the second disposablemasking layer 224.

Referring to FIG. 45, a first dielectric bonding material layer 252 isdeposited on the dielectric masking layer 242 and the first epitaxialsemiconductor portion 60. The first dielectric bonding material layer252 includes a dielectric material that can provide sufficient adhesionto the first semiconductor material of the first epitaxial semiconductorportion 60 so as to prevent detachment of the first semiconductormaterial. In one embodiment, the first dielectric bonding material layer252 can include an undoped silicon oxide material (such as undopedsilicate glass (USG)), a doped semiconductor oxide material (such asborophosphosilicate glass, borosilicate glass, phosphosilicate glass,fluorosilicate glass, etc.), a spin-on glass (SOG) material, or acombination thereof. The thickness of the first dielectric bondingmaterial layer 252 can be from 3 nm to 300 nm, although lesser andgreater thicknesses can also be employed.

Another patterned photoresist layer 247 is formed over the firstdielectric bonding material layer 252. The patterned photoresist layer247 includes an opening that overlies the second template epitaxialsemiconductor material portion 40.

Referring to FIG. 46, portions of the first dielectric bonding materiallayer 252 and the dielectric masking layer 242 within the area of theopening in the patterned photoresist layer 247 is removed, for example,by an etch. The patterned photoresist layer 247 is subsequently removed,for example, by ashing.

A second epitaxial semiconductor portion 70 is deposited directly on thesecond template epitaxial semiconductor material portion 40 employing aselective epitaxy process. A second semiconductor material isepitaxially deposited on the top surface of the second templateepitaxial semiconductor material portion 40. The second semiconductormaterial is different from the second template semiconductor material ofthe second template epitaxial semiconductor material portion 30, and isdifferent from the first semiconductor material of the first epitaxialsemiconductor portion 60. In one embodiment, the selective epitaxyprocess can be the same as in the processing step of FIG. 16 of thefirst embodiment. The selection of the second template semiconductormaterial and the second semiconductor material, the epitaxial alignmenttherebetween, and the lattice matching or lattice mismatch therebetweencan be the same as in the first embodiment.

In one embodiment, the second epitaxial material can be deposited abovethe top surface of the first dielectric bonding material layer 252, andsubsequently planarized such that the top surface of the secondepitaxial semiconductor portion 60 is coplanar with the top surface ofthe first dielectric bonding material layer 252. In this case, thethickness of the second epitaxial semiconductor portion 70, which isherein referred to as the second thickness t2, can be the same as thesum of the thickness of the first dielectric bonding material layer 252and the thickness of the dielectric masking layer 242.

Referring to FIG. 48, a second dielectric bonding material layer 254 isdeposited on the first dielectric bonding material layer and the secondepitaxial semiconductor portion 70. The second dielectric bondingmaterial layer 254 includes a dielectric material that can providesufficient adhesion to the second semiconductor material of the secondepitaxial semiconductor portion 70 so as to prevent detachment of thesecond semiconductor material. In one embodiment, the second dielectricbonding material layer 254 can include an undoped silicon oxide material(such as undoped silicate glass (USG)), a doped semiconductor oxidematerial (such as borophosphosilicate glass, borosilicate glass,phosphosilicate glass, fluorosilicate glass, etc.), a spin-on glass(SOG) material, or a combination thereof. The thickness of the seconddielectric bonding material layer 254 can be from 3 nm to 300 nm,although lesser and greater thicknesses can also be employed.

The composition of the second dielectric bonding material layer 254 maybe the same as, or may be different from, the composition of the seconddielectric bonding material layer 252. The second dielectric bondingmaterial layer 254 may include a self-planarizing material such as SOG,or may be planarized after deposition, for example, by chemicalmechanical planarization (CMP).

Optionally, the first dielectric bonding material layer 252 may beremoved prior to deposition of the second dielectric bonding materiallayers 254. Thus, one or two dielectric bonding material layers may bepresent over the top surface of the dielectric masking layer 242. Theentirety of the dielectric bonding material layers (252, 254) is hereinreferred to as at least one dielectric bonding material layer 250.

Subsequently, a handle substrate 8 is bonded to the at least onedielectric bonding material layer 250 in the same manner as in the firstembodiment.

Referring to FIG. 49, the single crystalline substrate 10 is removed.For example, the processing steps of FIG. 22 of the first embodiment maybe employed to remove the single crystalline substrate 10.

Referring to FIG. 50, the dielectric template material layer 20 isremoved. For example, the processing steps of FIG. 23 of the firstembodiment may be employed to remove the dielectric template materiallayer 20.

Referring to FIG. 51, the first and second template epitaxialsemiconductor material portions (30, 40) are removed selective to thefirst and second semiconductor portions (60, 70), respectively. Forexample, the processing steps of FIGS. 24 and 25 of the first embodimentmay be performed to remove the first and second template epitaxialsemiconductor material portions (30, 40). The third exemplarysemiconductor structure can be flipped upside down.

The third exemplary semiconductor structure includes at least onedielectric bonding material layer 250 located on a handle substrate 8,and a first epitaxial semiconductor portion 60 and a second epitaxialsemiconductor portion 70. At least a lower portion of one of the firstand second epitaxial semiconductor portions (60, 70), i.e., a lowerportion of the second epitaxial semiconductor portion 70, is embeddedwithin the at least one bonding material layer 250. One of the first andsecond epitaxial semiconductor portions (60, 70) include a singlecrystalline elemental semiconductor material, and another of the firstand second epitaxial semiconductor portions (60, 70) include a singlecrystalline compound semiconductor material.

In one embodiment, each of the first and second epitaxial semiconductorportions (60, 70) has a bottommost surface that is a crystallographicfacet, i.e., a crystallographic facet that is within the horizontalplane of the surfaces of the first dielectric bonding material layer252.

In one embodiment, a lower portion of the second epitaxial semiconductorportion 70 is embedded within the at least one dielectric bondingmaterial layer 250, and a bottommost surface of the first epitaxialsemiconductor portion 60 contacts a topmost surface of the at least onedielectric bonding material layer 250. The dielectric masking layer 242is a dielectric material layer located on the dielectric bondingmaterial layer 250, and can have a composition different from each ofthe at least one dielectric bonding material layer 250. A top surface ofthe second epitaxial semiconductor portion 70 is coplanar with a topmostsurface of the dielectric masking layer.

An upper portion of the first epitaxial semiconductor layer 60 protrudesabove a horizontal plane including the topmost surface of the dielectricmasking layer 242. Each of the first and second epitaxial semiconductorportions (60, 70) can have a rectangular shape in a verticalcross-sectional view.

Referring to FIG. 52, the processing steps of FIGS. 27-31 can beperformed. As in the first embodiment, one of the first and second fieldeffect transistors can be a p-type field effect transistor, and anotherof the first and second field effect transistors can be an n-type fieldeffect transistor. A body region, a source region, and a drain region ofthe n-type field effect transistor can include the single crystallinecompound semiconductor material, and a body region, a source region, anda drain region of the p-type field effect transistor can include thesingle crystalline elemental semiconductor material so as to provideoptimal charge carrier mobility to the p-type field effect transistorand the n-type field effect transistor.

Referring to FIG. 53, a fourth exemplary semiconductor structureaccording to a fourth embodiment of the present disclosure can bederived from the second exemplary structure of FIG. 33 or variousvariations thereof by depositing a dielectric hard mask layer 422 withinthe first and second trenches (29A, 29B). The dielectric hard mask layer422 can include any material that can be employed for the dielectrichard mask layer 22 of the first embodiment. The thickness of thedielectric hard mask layer 422 is selected to avoid filling of the firstor second trenches (29A, 29B).

Referring to FIG. 54, portions of the dielectric hard mask layer 422 areremoved from within the first trench 29A. First sidewalls of thedielectric template material layer 20 and a first surface of the singlecrystalline substrate 10 are physically exposed within the first trench29A. The removal of the portions of the dielectric hard mask layer 422from within the first trench 29A can be effected, for example, byforming a first patterned photoresist layer 427 over the dielectric hardmask layer 422 such that the first patterned photoresist layer 427includes an opening that overlies the first trench 29A. Physicallyexposed portions of the dielectric hard mask layer 422 can be removed byan etch selective to the dielectric material of the dielectric templatematerial layer 20. The first patterned photoresist layer 427 issubsequently removed, for example, by ashing.

Referring to FIG. 55, the processing steps of FIGS. 9 and 10 areperformed while the dielectric hard mask layer 422 provides the functionof the dielectric masking layer 22 of the first embodiment to preventnucleation of any semiconductor material thereupon. A first templateepitaxial semiconductor material portion 30 is formed within the firsttrench 29A. Because of the presence of the dielectric hard mask layer422 in the second trench 29B, a second template epitaxial semiconductormaterial portion is not formed at this step in contrast with the firstembodiment.

Referring to FIG. 56, a disposable masking layer 424 is formed over thedielectric hard mask layer 422 and the first template epitaxialsemiconductor material portion 30. The disposable masking layer 424includes a material that is different from the material of thedielectric hard mask layer 422. For example, the disposable maskinglayer 424 can include silicon nitride, silicon oxynitride, or siliconoxide. The thickness of the disposable masking layer 424 can be from 3nm to 60 nm, although lesser and greater thicknesses can also beemployed. A second patterned photoresist layer 429 is formed over thedisposable masking layer 424. The second patterned photoresist layer 429includes an opening that overlies the second cavity 29B.

Referring to FIG. 57, physically exposed portions of the disposablemasking layer 424 are removed, for example, by etching. The dielectrichard mask layer 422 is removed from within the second cavity 29Bemploying an etch chemistry that etches the material of the dielectrichard mask layer selective to the dielectric template material layer 20and the disposable masking layer 424.

Referring to FIG. 58, the processing steps of FIG. 13 are performedwhile the first disposable masking layer 424 provides the function ofthe disposable masking layer 24 of the first embodiment to preventnucleation of any semiconductor material thereupon. A second templateepitaxial semiconductor material portion 40 is formed within the secondtrench 29B at this step.

Referring to FIG. 59, the processing steps of FIG. 14 is performed whilethe dielectric hard mask layer 422 provides the function of thedielectric hard mask layer 22 of the first embodiment to preventnucleation of any semiconductor material thereupon. A top surface of thesecond template epitaxial semiconductor material portion 40 is coplanarwith a top surface of the dielectric hard mask layer 422 after theplanarization process.

The processing steps of FIGS. 15-31 can be subsequently performed suchthat the dielectric hard mask layer 422 provides the function of thedielectric hard mask layer 22 of the first embodiment.

Referring to FIG. 60, a fifth exemplary semiconductor structureaccording to a fifth embodiment of the present disclosure can be derivedfrom the first exemplary semiconductor structure of FIG. 14, the secondexemplary semiconductor structure of FIG. 41, or the fourth exemplarysemiconductor structure of FIG. 59 by recessing first and secondtemplate epitaxial semiconductor material portions (30, 40). Forexample, the top surface of the first template epitaxial semiconductormaterial portion 30 can be vertically recessed by a first recess depthR1 employing a first recess etch, and the top surface of the secondtemplate epitaxial semiconductor material portion 40 can be verticallyrecessed by a second recess depth R2 employing a second recess etch. Thefirst recess etch and the second recess etch may be the same etch, ortwo different etches employing disposable masking material layer toprovide differential recessing of the first and second templateepitaxial semiconductor material portions (30, 40).

Referring to FIG. 61, the processing steps of FIGS. 15 and 16 can beperformed. The thickness of the first epitaxial semiconductor portion 60is herein referred to as the first thickness t1, and the thickness ofthe second epitaxial semiconductor portion 60 is herein referred to asthe second thickness t2.

Referring to FIG. 62, the processing steps of FIGS. 17-31 can beperformed. The fifth exemplary semiconductor structure can include atleast one dielectric bonding material layer 50 located on a handlesubstrate 8, and a first epitaxial semiconductor portion (62, 64, 66)and a second epitaxial semiconductor portion (72, 74, 76). At least alower portion of each of the first and second epitaxial semiconductorportions (62, 64, 66, 72, 74, 76) is embedded within the at least onebonding material layer 50. One of the first and second epitaxialsemiconductor portions include a single crystalline elementalsemiconductor material, and another of the first and second epitaxialsemiconductor portions include a single crystalline compoundsemiconductor material.

Each of the first and second epitaxial semiconductor portions (62, 64,66, 72, 74, 76) can have a bottommost surface that is a crystallographicfacet. In one embodiment, surfaces of each of the first and secondepitaxial semiconductor portions includes a plurality of angledcrystallographic facets that are not horizontal and not vertical. In oneembodiment, all of the plurality of angled crystallographic facets is inphysical contact with surfaces of the at least one dielectric bondingmaterial layer 50.

Each of the first and second epitaxial semiconductor portions (62, 64,66, 72, 74, 76) can have a topmost surface that is located above atopmost surface of the at least one dielectric bonding material layer50. Each of the first and second epitaxial semiconductor portions has avertical cross-sectional shape that is the same as a union of arectangular shape and a trapezoidal shape in which a side of therectangular shape coincides with, and is adjoined to, one of parallelsides of the trapezoidal shape.

The embodiments of the present disclosure makes it possible to form oneor more Group IV devices, i.e., elemental semiconductor devices, thatinclude IV channel structures made from group IV material and one ormore III-V devices, i.e., compound semiconductor devices, that includeIII-V channel structures made from group III-V material on a same buriedinsulator layer, i.e., the at least one dielectric bonding materiallayer, located on the same substrate. In some embodiment, surfaces ofvarious components of the one or more Group IV devices and the one ormore III-V devices can be coplanar among one another as a result ofplanarization and/or as a result of conformal depositions. In someembodiment, the lateral distance between the one or more Group V deviceIII-V device and the one or more III-V devices can be less than 200 nm.In another embodiment, the lateral distance can be less than 100 nm. Inyet another embodiment, the lateral distance can be in a range from 20nm to 100 nm.

While the disclosure has been described in terms of specificembodiments, it is evident in view of the foregoing description thatnumerous alternatives, modifications and variations will be apparent tothose skilled in the art. Each of the embodiments described herein canbe implemented individually or in combination with any other embodimentunless expressly stated otherwise or clearly incompatible. Accordingly,the disclosure is intended to encompass all such alternatives,modifications and variations which fall within the scope and spirit ofthe disclosure and the following claims. cm What is claimed is:

What is claimed is:
 1. A semiconductor structure comprising at least onedielectric bonding material layer located on a handle substrate; a firstepitaxial semiconductor portion and a second epitaxial semiconductorportion, wherein at least a lower portion of one of said first andsecond epitaxial semiconductor portions is embedded within said at leastone bonding material layer, wherein one of said first and secondepitaxial semiconductor portions comprises a single crystallineelemental semiconductor material, and another of said first and secondepitaxial semiconductor portions comprises a single crystalline compoundsemiconductor material; and a dielectric material layer located on, andabove, said at least one dielectric bonding material layer and having acomposition different from said at least one dielectric bonding materiallayer, wherein a top surface of said second epitaxial semiconductorportion is coplanar with a topmost surface of said dielectric materiallayer and an upper portion of said first epitaxial semiconductor layerprotrudes above a horizontal plane including said topmost surface ofsaid dielectric material layer.
 2. The semiconductor structure of claim1, wherein each of said first and second epitaxial semiconductorportions has a bottommost surface that is a crystallographic facet. 3.The semiconductor structure of claim 1, wherein surfaces of each of saidfirst and second epitaxial semiconductor portions include a plurality ofangled crystallographic facets that are not horizontal and not vertical.4. The semiconductor structure of claim 3, wherein all of said pluralityof angled crystallographic facets are in physical contact with surfacesof said at least one dielectric bonding material layer.
 5. Thesemiconductor structure of claim 1, wherein at least a lower portion ofeach of said first and second epitaxial semiconductor portions isembedded within said at least one dielectric bonding material layer. 6.The semiconductor structure of claim 5, wherein each of said first andsecond epitaxial semiconductor portions has a trapezoidal shape in avertical cross-sectional view.
 7. The semiconductor structure of claim5, wherein each of said first and second epitaxial semiconductorportions has a topmost surface that is located above a topmost surfaceof said at least one dielectric bonding material layer.
 8. Thesemiconductor structure of claim 5, wherein each of said first andsecond epitaxial semiconductor portions has a vertical cross-sectionalshape that is the same as a union of a rectangular shape and atrapezoidal shape in which a side of said rectangular shape coincideswith, and is adjoined to, one of parallel sides of said trapezoidalshape.
 9. The semiconductor structure of claim 1, wherein a lowerportion of said second epitaxial semiconductor portion is embeddedwithin said at least one bonding material layer, and a bottommostsurface of said first epitaxial semiconductor portion contacts a topmostsurface of said at least one dielectric bonding material layer.
 10. Thesemiconductor structure of claim 1, wherein each of said first andsecond epitaxial semiconductor portions has a rectangular shape in avertical cross-sectional view.
 11. The semiconductor structure of claim1, wherein said first and second epitaxial semiconductor portions havedifferent thicknesses.
 12. The semiconductor structure of claim 1,wherein said at least one dielectric bonding material layer includes atleast one silicon oxide layer.
 13. The semiconductor structure of claim1, wherein said at least one dielectric bonding material layer comprisesa plurality of dielectric bonding material layers having differentcompositions.
 14. The semiconductor structure of claim 1, furthercomprising: a first field effect transistor located on said handlesubstrate, wherein said first epitaxial semiconductor portion comprisesa body region, a source region, and a drain region of said first fieldeffect transistor; and a second field effect transistor located on saidhandle substrate, wherein said second epitaxial semiconductor portioncomprises a body region, a source region, and a drain region of saidsecond field effect transistor.
 15. The semiconductor structure of claim14, wherein one of said first and second field effect transistors is ap-type field effect transistor, and another of said first and secondfield effect transistors is an n-type field effect transistor, andwherein a body region, a source region, and a drain region of saidn-type field effect transistor includes said single crystalline compoundsemiconductor material, and a body region, a source region, and a drainregion of said p-type field effect transistor includes said singlecrystalline elemental semiconductor material.
 16. The semiconductorstructure of claim 14, wherein said first field effect transistorcomprises a first capping semiconductor material portion in contact witha top surface of, and in epitaxial alignment with, said first epitaxialsemiconductor portion, and said second field effect transistor comprisesa second capping semiconductor material portion in contact with a topsurface of, and in epitaxial alignment with, said second epitaxialsemiconductor portion, wherein said first and second cappingsemiconductor material portions have a same thickness.
 17. Thesemiconductor structure of claim 1, wherein said single crystallineelemental semiconductor material is selected from single crystallinesilicon, single crystalline germanium, a single crystallinesilicon-germanium alloy, a single crystalline silicon-carbon alloy, anda single crystalline silicon-germanium-carbon alloy.
 18. Thesemiconductor structure of claim 1, wherein said single crystallinecompound semiconductor material is selected from a III-V compoundsemiconductor material and a II-V compound semiconductor material. 19.The semiconductor structure of claim 1, wherein said handle substrate isselected from a bulk semiconductor substrate, asemiconductor-on-insulator substrate, a stack of at least twosemiconductor material layers having different compositions andepitaxially aligned to one another, an insulator substrate, a metallicsubstrate, and a plastic substrate.
 20. The semiconductor structure ofclaim 1, wherein said at least one dielectric bonding material layercomprises: a first dielectric bonding material layer contacting a bottomsurface of said first epitaxial semiconductor material portion; and asecond dielectric bonding material layer contacting a bottom surface ofsaid second epitaxial semiconductor portion and a top surface of saidfirst dielectric bonding material layer.